Title :
Photonic Crystal Cavity Lasers Patterned by a Combination of Holography and Photolithography
Author :
Cho, Chi-O ; Lee, Joonhee ; Park, Yeonsang ; Roh, Yeong-Geun ; Jeon, Heonsu ; Kim, In
Author_Institution :
LCD Dev. Center, Samsung Electron. Co., Chungnam
fDate :
4/15/2007 12:00:00 AM
Abstract :
Air-bridge-type InGaAsP photonic crystal cavity lasers (PCCLs) have been fabricated by employing a combined lithographic technique of laser holography (LH) and photolithography. Cavities of 4-5 mum in diameter were formed photolithographically on a square-lattice photonic crystal background pattern which was predefined by the LH process. Despite structural imperfections originated from the inevitable pattern misalignment during the combination lithography, 40% or higher of the PCCLs lased. Removal of modal degeneracy due to symmetry breaking, which was confirmed by computer simulations, provided a rationale on this rather unexpected result: the structurally imperfect PCCLs (as defined by our combination lithography) might compete with the so-called perfect PCCLs (as defined by, say, the electron-beam lithography) in terms of cavity Q-factor
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; holography; indium compounds; laser cavity resonators; photolithography; photonic crystals; semiconductor lasers; 4 to 5 mum; InGaAsP; InGaAsP lasers; air-bridge-type lasers; cavity Q-factor; combination lithography; holography; laser patterning; modal degeneracy removal; pattern misalignment; photolithography; photonic crystal cavity lasers; square-lattice photonic crystal; symmetry breaking; Computer simulation; Finite difference methods; Holography; Lithography; Personal communication networks; Photonic crystals; Semiconductor lasers; Throughput; Time domain analysis; Waveguide lasers; Cavity $Q$-factor; finite-difference time-domain (FDTD); holography; photolithography; photonic crystals (PCs); plane-wave expansion (PWE); semiconductor lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2007.893903