Observations on competing mechanisms governing the C-V responses of nonlinear ceramic capacitors

Ceramic capacitors with nonlinear C-V response find application in power-electronic snubber switching circuits at higher voltages. Here, the AC and in-situ switching C-V responses of commercial multilayer and high-voltage disc capacitors are compared in relation to their postulated ferroelectric grain and p-n junction grain-boundary contributions, with a view to optimizing component performance through an increased understanding of such interrelated mechanisms