Title :
InGaP/GaAs based single and double heterojunction bipolar transistors grown by MOMBE
Author :
Ren, Fengyuan ; Abernathy, C.R. ; Pearton, S.J. ; Wisk, Patrick W. ; Esagui, R.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
6/4/1992 12:00:00 AM
Abstract :
Carbon-doped based InGaP/GaAs single and double heterojunction bipolar transistors (HBTs) grown by gas-source metal organic molecular beam epitaxy (MOMBE) are reported. Large area devices (emitter diameter 70 mu m) exhibited gain of 25 for high injection levels at a base doping of 5*1019 cm-3. Ideality factors (<1.1) were obtained for both emitter-base and base-collector junctions in both single (SHBT) and double (DHBT) heterojunction devices. Vceos of 12 and 19 V for SHBTs and DHBTs, respectively, were measured.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; 12 V; 19 V; DHBT; InGaP-GaAs; MOMBE; SHBT; base-collector junctions; emitter diameter; emitter-base junctions; gas-source metal organic molecular beam epitaxy; heterojunction bipolar transistors; injection levels;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920726
