Wide Spectral Response Field-Effect Phototransistor Based on Graphene–Quantum Dot Hybrid

Author

Wang, R. ; Zhang, Y.T. ; Wang, H.Y. ; Song, X.X. ; Jin, L.F. ; Yao, J.Q.

Author_Institution

Coll. of Precision Instrum. & Opto-Electron. Eng., Tianjin Univ., Tianjin, China

Volume

7

Issue

2

fYear

2015

fDate

Apr-15

Firstpage

1

Lastpage

6

Abstract

The photoelectrical characteristics of field-effect phototransistors (FEPTs) are investigated experimentally based on a graphene-PbS quantum dot (QD) hybrid. The device presented a wide spectral response range from 300 to 1400 nm because of multiple-exciton generation of PbS QDs. The photoelectrical responsivity reached up to 2×10⁵A/W at low bias voltage ( ~10 mV) and became more sensitive with increasing bias voltage. The transient response of the hybrid FEPTs was also measured with the relaxation times and the decay times around several seconds. Such devices exhibit great competitiveness in wide spectral response, flexible integrated circuits with low cost, large area, low energy consumption, and high responsivity.

Keywords

IV-VI semiconductors; excitons; field effect transistors; graphene; lead compounds; photoelectricity; phototransistors; semiconductor quantum dots; transients; C-PbS; decay times; field-effect phototransistor; flexible integrated circuits; graphene-quantum dot hybrid; high responsivity; large area; low bias voltage; low energy consumption; multiple-exciton generation; photoelectrical characteristics; photoelectrical responsivity; relaxation times; transient response; wavelength 300 nm to 1400 nm; wide spectral response; Graphene; Lasers; Lighting; Logic gates; Photonics; Physics; Quantum dots; Field-effect phototransistor; PbS quantum dot; field effect phototransistor; graphene; graphene,; wide spectral response;

fLanguage

English

Journal_Title

Photonics Journal, IEEE

Publisher

ieee

ISSN

1943-0655

Type

jour

DOI

10.1109/JPHOT.2015.2406531

Filename

7047220