Title :
Postgrowth nondestructive characterization of dilute-nitride VCSELs using electroreflectance spectroscopy
Author :
Choulis, S.A. ; Hosea, T.J.C. ; Ghosh, S. ; Klar, P.J. ; Hofmann, M.
Author_Institution :
Blackett Lab., Imperial Coll., London, UK
Abstract :
We report electroreflectance (ER) measurements on a dilute-N GaInNAs vertical-cavity surface-emitting laser structure, as a function of temperature T, which probe the coupling between the cavity mode (CM) and a broad quantum-well (QW) ground state exciton. The latter is not separately observable in the ER, but, by monitoring the coupled CM-QW lineshape, we show it has maximum amplitude and is anti-symmetric when the CM and QW energies coincide at a certain T/sub opt/. This predicted T/sub opt/ is confirmed by optically pumped lasing measurements on the same sample.
Keywords :
III-V semiconductors; electroreflectance; excitons; gallium arsenide; indium compounds; laser cavity resonators; laser modes; monitoring; optical pumping; optical testing; quantum well lasers; semiconductor device testing; spectral line breadth; surface emitting lasers; CM-QW lineshape; GaInNAs; QW energies; anti-symmetric; broad quantum-well ground state exciton; cavity mode; dilute-N GaInNAs vertical-cavity surface-emitting laser structure; dilute-nitride VCSELs; electroreflectance spectroscopy; optically pumped lasing measurements; postgrowth nondestructive characterization; Erbium; Gain measurement; Land surface temperature; Laser modes; Optical coupling; Optimized production technology; Probes; Spectroscopy; Surface emitting lasers; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2003.815364
