Integrated 1.3-μm DFB laser electroabsorption modulator based on identical MQW double-stack active layer with 25-GHz modulation performance

Author

Stegmueller, B. ; Hanke, C.

Author_Institution

Corporate Res., Infineon Technol. AG, Munich, Germany

Volume

15

Issue

8

fYear

2003

Firstpage

1029

Lastpage

1031

Abstract

1.31-μm electroabsorption modulators monolithically integrated with a DFB laser diode have been realized using an identical InGaAsP-InP multiple quantum-well-layer structure composed of two different QW types. Low laser threshold currents <13 mA and high 3-dBe cutoff frequency up to /spl sim/25 GHz have been measured.

Keywords

III-V semiconductors; distributed feedback lasers; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; optical transmitters; quantum well lasers; semiconductor quantum wells; 1.31 micron; 13 mA; GHz modulation performance; InGaAsP-InP; InGaAsP-InP multiple quantum-well structure; InGaAsP-InP multiple quantum-well-layer structure; MQW double-stack active layer; QW types; integrated 1.3-/spl mu/m DFB laser electroabsorption modulator; low laser threshold currents; Bandwidth; Chirp modulation; Diode lasers; High speed optical techniques; Monolithic integrated circuits; Optical modulation; Photonic band gap; Quantum well devices; Quantum well lasers; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2003.815322

Filename

1215492