• DocumentCode
    750960
  • Title

    Designing transistor operating points within a specified ΔIc due to changes in β and VBE

  • Volume
    20
  • Issue
    2
  • fYear
    1977
  • fDate
    5/1/1977 12:00:00 AM
  • Firstpage
    118
  • Lastpage
    119
  • Abstract
    A sound pedagogical method for designing stable operating points for bipolar transistors that have a range of β and VBE is presented. The method outlines a procedure for designing an amplifier to within a specified ΔIC where β and VBE have variations due to a spread in parameters during fabrication and/or due to temperature changes. A design example, with experimental verification, is presented.
  • Keywords
    Bipolar integrated circuits; Bipolar transistors; Design methodology; Electronic circuits; Equations; FETs; Fabrication; Resistors; Silicon; Temperature;
  • fLanguage
    English
  • Journal_Title
    Education, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9359
  • Type

    jour

  • DOI
    10.1109/TE.1977.4321131
  • Filename
    4321131
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=750960