Narrow-stripe distributed reflector lasers with first-order vertical grating and distributed Bragg reflectors

Author

Kim, H.C. ; Kanjo, H. ; Tamura, S. ; Arai, S.

Author_Institution

Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan

Volume

15

Issue

8

fYear

2003

Firstpage

1032

Lastpage

1034

Abstract

Narrow-stripe 1.55-μm wavelength distributed reflector lasers consisting of both distributed Bragg reflectors and vertical grating of the first Bragg order were fabricated. A low threshold current I/sub th/ of 2.8 mA, a differential quantum efficiency /spl eta//sub d/ of 28% from the front facet, and a submode suppression ratio of 44 dB were obtained for structures with a stripe width of 1.3 μm and a cavity length of 150 μm.

Keywords

III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser modes; laser transitions; optical transmitters; quantum well lasers; 1.3 micron; 1.55 micron; 150 micron; 2.8 mA; GaInAsP; GaInAsP quantum-well laser; cavity length; differential quantum efficiency; distributed Bragg reflectors; first Bragg order; first-order vertical grating; front facet; narrow-stripe distributed reflector lasers; stripe width; submode suppression ratio; threshold current; vertical grating; Bragg gratings; Distributed Bragg reflectors; Distributed feedback devices; Etching; Laser feedback; Laser modes; Mirrors; Threshold current; Vertical cavity surface emitting lasers; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2003.815330

Filename

1215493