Title :
High-voltage (3 kV) UMOSFETs in 4H-SiC
Author :
Li, Y. ; Cooper, J.A., Jr. ; Capano, M.A.
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
fDate :
6/1/2002 12:00:00 AM
Abstract :
Vertical trench-gate metal-oxide-semiconductor field-effect transistors (UMOSFETs) in 4H-SiC having both trench oxide protection and junction termination extension (JTE) are reported for the first time. Devices are fabricated with and without counter-doped channels. Blocking voltages and specific on-resistances are 3360 V and 199 mΩ-cm2 for doped-channel FETs and 3055 V and 121 mΩ-cm2 for FETs without doped channels. These blocking voltages are the highest reported to date for UMOSFETs in SiC
Keywords :
isolation technology; leakage currents; power MOSFET; silicon compounds; sputter etching; wide band gap semiconductors; 3 kV; SiC; UMOSFET; blocking voltages; counter-doped channels; ionization coefficients; junction termination extension; on-state characteristics; reactive ion etching; reverse leakage current density; specific on-resistances; trench oxide protection; vertical trench-gate MOSFET; FETs; Implants; MOSFET circuits; Power MOSFET; Protection; Silicon carbide; Temperature; Termination of employment; Voltage; Wideband;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2002.1003714
