Analysis and design of a low-voltage high-frequency LDMOS transistor

Author

Vestling, Lars ; Ankarcrona, Johan ; Olsson, Jörgen

Author_Institution

Angstrom Lab., Uppsala Univ., Sweden

Volume

49

Issue

6

fYear

2002

fDate

6/1/2002 12:00:00 AM

Firstpage

976

Lastpage

980

Abstract

For a low voltage lateral double-diffused MOS (LDMOS) transistor, the output performance has been improved in terms of f_MAX. This is done by decreasing the output capacitance and thus decreasing the total output conductance. Extraction of the model parameters has been made and the most efficient parameter to improve was identified and linked to a specific part of the transistor structure. Layout changes in the n-well/p-base region were done as the result of the model analyses and finally, the modified devices were processed. Measurements on the improved devices showed results that closely, matched the expected, and f_MAX was increased with 30% and only a slight decrease in f _T. Finally, the capacitance reduction in the n-well/p-base junction was measured by direct. measurements

Keywords

S-parameters; equivalent circuits; microwave field effect transistors; microwave power transistors; power MOSFET; semiconductor device models; LV HF LDMOS transistor; S-parameter; current-voltage characteristics; equivalent circuits; layout changes; microwave FET; model parameters; n-well/p-base junction; output capacitance; output performance; small-signal parameters; total output conductance; CMOS process; Capacitance measurement; Equivalent circuits; Frequency; Low voltage; MOSFETs; Microwave FETs; Microwave circuits; Microwave transistors; Process design;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2002.1003715

Filename

1003715