Title :
Optical preamplifier using antireflection-coating-free semiconductor optical amplifier with signal-inverted ASE
Author :
Yamatoya, T. ; Koyama, F.
Author_Institution :
Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
We fabricated an antireflection (AR)-coating-free semiconductor optical amplifier (SOA) with an absorbing region for an optical preamplifier. In the fabricated SOA, the resonance of light was fully suppressed so that the amplitude of the ripple of amplified spontaneous emission (ASE) spectra was as small as 0.36 dB, which is comparable to conventional SOAs with AR coating at both facets. We formed an optical preamplifier using the AR-coating-free SOA. The gain saturation of the SOA gives us the signal conversion to ASE and the amplification of the signal. The small-signal fiber-to-fiber and chip gain of the preamplifier were 11.4 and 20.0 dB, respectively. The 3-dB optical gain bandwidth of the preamplifier was about 30 nm.
Keywords :
III-V semiconductors; antireflection coatings; gallium arsenide; indium compounds; optical saturation; optical transmitters; preamplifiers; quantum well lasers; semiconductor optical amplifiers; superradiance; 3 dB; GaInAsP; GaInAsP quantum-well lasers; absorbing region; amplified spontaneous emission spectra; antireflection-coating-free semiconductor optical amplifier; chip; facets; gain saturation; optical gain bandwidth; optical preamplifier; signal conversion; signal-inverted ASE; small-signal fiber-to-fiber gain; Coatings; Optical fiber networks; Optical pulses; Optical pumping; Optical saturation; Optical waveguides; Preamplifiers; Semiconductor optical amplifiers; Spontaneous emission; Stimulated emission;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2003.815308
