• DocumentCode
    751037
  • Title

    Active-matrix organic light-emitting diode displays realized using metal-induced unilaterally crystallized polycrystalline silicon thin-film transistors

  • Author

    Meng, Zhiguo ; Wong, Man

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
  • Volume
    49
  • Issue
    6
  • fYear
    2002
  • fDate
    6/1/2002 12:00:00 AM
  • Firstpage
    991
  • Lastpage
    996
  • Abstract
    Requirement on thin-film transistors, particularly in terms of current-drive and parameter uniformity, for active-matrix organic light-emitting diode displays, was analyzed. Metal-induced unilaterally crystallized polycrystalline silicon thin-film transistor technology was shown to satisfy such and other demands. Though pixel designs involving more transistors were certainly advantageous, appropriate biasing scheme allowed a simpler and larger aperture-ratio two-transistor design. As a demonstration, active matrices were fabricated and integrated with organic light-emitting diodes to make monochrome video display panels, each consisting of 120 rows and 160 columns
  • Keywords
    LED displays; elemental semiconductors; flat panel displays; silicon; thin film transistors; active-matrix organic light-emitting diode displays; aperture-ratio two-transistor design; biasing scheme; current-drive uniformity; flat-panel display; metal-induced unilaterally crystallized transistors; monochrome video display panels; parameter uniformity; pixel designs; polysilicon thin-film transistors; Active matrix organic light emitting diodes; Active matrix technology; Crystallization; Flat panel displays; Liquid crystal displays; Organic light emitting diodes; Power dissipation; Silicon; Thin film transistors; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2002.1003718
  • Filename
    1003718