Broadening of the below-threshold near-field profile of GaAs quantum-well lasers due to photon recycling

Author

Gavrilovic, P. ; Wober, M. ; Meehan, K. ; O´Neill, M.S.

Author_Institution

Microdevice Lab., Polaroid Corp., Cambridge, MA, USA

Volume

31

Issue

4

fYear

1995

fDate

4/1/1995 12:00:00 AM

Firstpage

623

Lastpage

626

Abstract

The subthreshold near-field profile of single quantum well laser diodes was studied experimentally and theoretically. Wide gain-guided stripes as well as single lateral mode ridge-waveguide diodes mere investigated. In both types of device, the measured width of the near-field was significantly wider than the width predicted by the conventional theory which includes ambipolar carrier diffusion as the only spatial broadening mechanism. A new model that invokes close to 100% efficient photon recycling was developed to explain the observed near-field profiles

Keywords

III-V semiconductors; carrier mobility; gallium arsenide; laser modes; laser theory; photons; quantum well lasers; semiconductor device models; spectral line broadening; waveguide lasers; GaAs quantum-well lasers; ambipolar carrier diffusion; below-threshold near-field profile broadening; near-field; near-field profiles; photon recycling; single lateral mode ridge-waveguide diodes; single quantum well laser diodes; spatial broadening mechanism; subthreshold near-field profile; wide gain-guided stripes; Charge carrier density; Current measurement; Diode lasers; Etching; Gallium arsenide; Lenses; Quantum well lasers; Recycling; Shape measurement; Spontaneous emission;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.371934

Filename

371934