Gain, refractive index, linewidth enhancement factor from spontaneous emission of strained GaInP quantum-well lasers

Author

Hunziker, Guido ; Knop, Werner ; Unger, Peter ; Harder, Christoph

Author_Institution

Res. Div., IBM Zurich Res. Lab., Ruschlikon, Switzerland

Volume

31

Issue

4

fYear

1995

fDate

4/1/1995 12:00:00 AM

Firstpage

643

Lastpage

646

Abstract

Unamplified spontaneously emitted light was measured through openings in the top contact of GaInP strained quantum-well ridge lasers. The data was recorded over a spectral range from 1.65 to 2.25 eV for different injection currents below threshold. Hakki-Paoli gain measurements of the same devices were used to determine the quasi-Fermi level separation and the scaling constant needed to calculate the modal gain from spontaneous emission spectra. The refractive index change due to current injection and the linewidth enhancement factor were derived from this data

Keywords

III-V semiconductors; gallium compounds; indium compounds; laser modes; quantum well lasers; refractive index; ridge waveguides; spectral line breadth; spontaneous emission; waveguide lasers; 1.65 to 2.25 eV; GaInP; GaInP strained quantum-well ridge lasers; Hakki-Paoli gain measurements; below threshold; current injection; injection currents; linewidth enhancement factor; modal gain; quasi-Fermi level separation; refractive index; refractive index change; scaling constant; spectral range; spontaneous emission; spontaneous emission spectra; strained GaInP quantum-well lasers; top contact; unamplified spontaneously emitted light; Gain measurement; Laser feedback; Laser modes; Optical refraction; Optical variables control; Optical waveguides; Quantum well lasers; Refractive index; Spontaneous emission; Waveguide lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.371937

Filename

371937