On the applicability of nonself-consistent Monte Carlo device simulations

Author

Jungemann, C. ; Meinerzhagen, B.

Author_Institution

Bremen Univ., Germany

Volume

49

Issue

6

fYear

2002

fDate

6/1/2002 12:00:00 AM

Firstpage

1072

Lastpage

1074

Abstract

Recently, nonself-consistent (with respect to the electric field) Monte Carlo (NSC-MC) simulations have been proposed for the estimation of the noise and expected value of stationary terminal currents without examining the accuracy of the NSC approximation for these kinds of simulations. Comparison with self-consistent (SC) simulations reveals that NSC simulations of quantities like the drain current of a MOSFET or collector current of a BJT tend to reproduce the results of the momentum-based model used to calculate the electric field without improving the accuracy. In case of terminal current noise it is found that under nonequilibrium conditions the NSC results can substantially overestimate the SC results

Keywords

MOSFET; Monte Carlo methods; bipolar transistors; current fluctuations; hot carriers; semiconductor device models; semiconductor device noise; BJT; NMOSFET; collector current; current fluctuations; device simulations; drain current; hot-carrier phenomena; momentum-based model; nonequilibrium conditions; nonself-consistent Monte Carlo simulations; stationary terminal currents; terminal current noise; Boundary conditions; Computational modeling; High definition video; Hot carriers; MOSFET circuits; Monte Carlo methods; Plasma devices; Plasma simulation; Plasma stability; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2002.1003749

Filename

1003749