Improvement of RCA transistor using RTA annealing after the formation of interfacial oxide

Author

Chun, Zhang Li ; Yan, Jin Hai ; Fei, Ye Hong ; Zhi, Gao Yu ; Jun, Ning Bao ; Xian, Mo Bang

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

Volume

49

Issue

6

fYear

2002

fDate

6/1/2002 12:00:00 AM

Firstpage

1075

Lastpage

1076

Abstract

A polysilicon emitter RCA transistor (an ultra-thin interfacial oxide layer exists between polysilicon and silicon emitter) is presented which can operate at 77 K for the first time. An ultra-thin (1.5 nm) interfacial oxide layer is grown deliberately between polysilicon and silicon emitter using RCA oxidation and excellent device stability is obtained after rapid thermal annealing (RTA) treatment in nitrogen atmosphere. The RCA transistor exhibits good electrical performance at very low temperature for an emitter area of 3 × 8 μm². The maximum toggle frequency of a 1:2 static divider is 1.2 GHz and 732 MHz at 300 K and 77 K, respectively

Keywords

bipolar transistors; cryogenic electronics; elemental semiconductors; oxidation; rapid thermal annealing; silicon; surface cleaning; 1.5 nm; 77 K; RCA oxidation; RCA transistor; Si; current gain; device stability; polysilicon emitter transistor; rapid thermal annealing; surface cleaning; toggle frequency; ultrathin interfacial oxide layer; Atmosphere; Bipolar transistors; Etching; Hafnium; Oxidation; Rapid thermal annealing; Silicon; Surface cleaning; Temperature; Thermal stability;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2002.1003751

Filename

1003751