DocumentCode :
751426
Title :
Technology leverage for ultra-low power information systems
Author :
Stork, Johannes M C
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Volume :
83
Issue :
4
fYear :
1995
fDate :
4/1/1995 12:00:00 AM
Firstpage :
607
Lastpage :
618
Abstract :
Many applications for future generations of logic and memory chips will be requiring highly sophisticated computing functions at low cost. Small form factors, portability, and low cost will require low power operation. While continued scaling of silicon technology to dimensions below quarter micron devices and interconnections appears technically feasible, higher levels of integration and operation at higher speed have been driving the power consumption of logic chips up instead of down. This paper discusses how scaled submicron silicon technology can provide leverage to reduce power, while gaining in throughput for logic chips, and in capacity for memory functions. Strong reductions in voltage supply have to accompany shrinking dimensions. Materials limits such as tunneling currents through ultra-thin silicon-dioxide gate dielectrics and electromigration in minimum pitch interconnections emerge to be key challenges to realize low power 0.1 μm level CMOS circuits. A more than 10× gain in productivity as measured by the energy*delay product can be realized by shrinking from 0.5-0.125 μm CMOS device technology
Keywords :
CMOS logic circuits; CMOS memory circuits; DRAM chips; elemental semiconductors; integrated circuit modelling; integrated circuit technology; microprocessor chips; reviews; silicon; silicon-on-insulator; 0.1 to 0.5 micron; CMOS circuits; IC technology; SOI technology; Si; electromigration; logic chips; memory chips; minimum pitch interconnections; scaled submicron Si technology; tunneling currents; ultra-low power ICs; ultra-thin SiO2 gate dielectrics; voltage supply reduction; CMOS logic circuits; CMOS technology; Cost function; Energy consumption; Information systems; Integrated circuit interconnections; Logic devices; Power system interconnection; Silicon; Throughput;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/5.371969
Filename :
371969
Link To Document :
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