DocumentCode
751426
Title
Technology leverage for ultra-low power information systems
Author
Stork, Johannes M C
Author_Institution
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Volume
83
Issue
4
fYear
1995
fDate
4/1/1995 12:00:00 AM
Firstpage
607
Lastpage
618
Abstract
Many applications for future generations of logic and memory chips will be requiring highly sophisticated computing functions at low cost. Small form factors, portability, and low cost will require low power operation. While continued scaling of silicon technology to dimensions below quarter micron devices and interconnections appears technically feasible, higher levels of integration and operation at higher speed have been driving the power consumption of logic chips up instead of down. This paper discusses how scaled submicron silicon technology can provide leverage to reduce power, while gaining in throughput for logic chips, and in capacity for memory functions. Strong reductions in voltage supply have to accompany shrinking dimensions. Materials limits such as tunneling currents through ultra-thin silicon-dioxide gate dielectrics and electromigration in minimum pitch interconnections emerge to be key challenges to realize low power 0.1 μm level CMOS circuits. A more than 10× gain in productivity as measured by the energy*delay product can be realized by shrinking from 0.5-0.125 μm CMOS device technology
Keywords
CMOS logic circuits; CMOS memory circuits; DRAM chips; elemental semiconductors; integrated circuit modelling; integrated circuit technology; microprocessor chips; reviews; silicon; silicon-on-insulator; 0.1 to 0.5 micron; CMOS circuits; IC technology; SOI technology; Si; electromigration; logic chips; memory chips; minimum pitch interconnections; scaled submicron Si technology; tunneling currents; ultra-low power ICs; ultra-thin SiO2 gate dielectrics; voltage supply reduction; CMOS logic circuits; CMOS technology; Cost function; Energy consumption; Information systems; Integrated circuit interconnections; Logic devices; Power system interconnection; Silicon; Throughput;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/5.371969
Filename
371969
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