Title :
Enhanced Strain Effects in 25-nm Gate-Length Thin-Body nMOSFETs With Silicon–Carbon Source/Drain and Tensile-Stress Liner
Author :
Ang, Kah-Wee ; Chui, King-Jien ; Tung, Chih-Hang ; Balasubramanian, N. ; Li, Ming-Fu ; Samudra, Ganesh S. ; Yeo, Yee-Chia
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore
fDate :
4/1/2007 12:00:00 AM
Abstract :
We report the demonstration of 25-nm gate-length LG strained nMOSFETs featuring the silicon-carbon source and drain (Si1-yCyS/D) regions and a thin-body thickness T body of ~18 nm. This is also the smallest reported planar nMOSFET with the Si1-yCyS/D stressors. Strain-induced mobility enhancement due to the Si1-yCy S/D leads to a significant drive-current IDsat enhancement of 52% over the control transistor. Furthermore, the integration of tensile-stress SiN etch stop layer and Si1-yC yS/D extends the IDsat enhancement to 67%. The performance enhancement was achieved for the devices with similar subthreshold swing and drain-induced barrier lowering. The Si1-y CyS/D technology and its combination with the existing strained-silicon techniques are promising for the future high-performance CMOS applications
Keywords :
MOSFET; electron mobility; nanoelectronics; semiconductor technology; silicon compounds; wide band gap semiconductors; 18 nm; 25 nm; SiC; SiN; drive-current enhancement; electron mobility; enhanced strain effects; high-performance CMOS applications; performance enhancement; planar nMOSFET; strain-induced mobility enhancement; tensile-stress liner; thin-body nMOSFET; Capacitive sensors; Electron mobility; Etching; Implants; Lattices; MOSFETs; Silicon compounds; Strain control; Tensile strain; Tensile stress; Electron mobility; nMOSFET; silicon nitride liner; silicon–carbon $(hbox{Si}_{1 - y} hbox{C}_{y})$; strain; stress;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.893221
