Title :
High performance AlGaAs/GaAs quantum well MODFETs grown by chemical beam epitaxy
Author :
Kempter, R. ; Rothfritz, H. ; Plauth, J. ; Muller, Rudolf ; Trankle, Gunther ; Weimann, G.
Author_Institution :
Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany
fDate :
6/4/1992 12:00:00 AM
Abstract :
High quality modulation doped AlGaAs/GaAs QW structures were grown by chemical beam epitaxy using TEGa, TiBAl and AsH3. MODFETs with gate lengths of 0.2 mu m fabricated from these heterostructures show extrinsic DC transconductances gm,max=330 mS/mm at drain currents ID=145 mA/mm. Maximum drain currents are IDmax=275 mA/mm. RF characterisation reveals extrinsic cutoff frequencies fT=72 GHz for the current gain, and fmax=144 GHz for the unilateral power gain, respectively.
Keywords :
III-V semiconductors; aluminium compounds; chemical beam epitaxial growth; gallium arsenide; high electron mobility transistors; semiconductor quantum wells; 0.2 micron; AlGaAs-GaAs; III-V semiconductors; MODFETs; RF characterisation; chemical beam epitaxy; current gain; drain currents; extrinsic DC transconductances; extrinsic cutoff frequencies; gate lengths; quantum well; unilateral power gain;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920732
