Title :
AlGaN Photodetectors Prepared on Si Substrates
Author :
Chiou, Y.Z. ; Lin, Y.C. ; Wang, C.K.
Author_Institution :
Dept. of Electron. Eng., Southern Taiwan Univ., Tainan
fDate :
4/1/2007 12:00:00 AM
Abstract :
AlGaN ultraviolet (UV) metal-semiconductor-metal (MSM) photodetectors (PDs) grown on silicon substrates were fabricated and characterized. With 5-V applied bias, it was found that dark current density of Al0.2Ga0.7N PDs on silicon substrate was only 7.5times10-9 A/cm2. With an applied bias of 7 V, it was found that peak responsivities were 0.09 and 0.11 A/W while UV/visible rejection ratios (i.e., peak wavelength: 420 nm) were 324 and 278 for Al0.2Ga0.8N and Al0.3 Ga0.7N MSM PDs, respectively. Moreover, the noise equivalent power of Al0.2Ga0.8N MSM PDs was estimated to be 3.5times10-12 W
Keywords :
III-V semiconductors; aluminium compounds; metal-semiconductor-metal structures; photodetectors; silicon; wide band gap semiconductors; 5 V; 7 V; AlGaN-Si; dark current density; noise equivalent power; ultraviolet metal-semiconductor-metal photodetectors; Aluminum gallium nitride; Epitaxial layers; Gallium nitride; Microelectronics; Photodetectors; Semiconductor device noise; Silicon carbide; Strain measurement; Substrates; Thermal conductivity; AlGaN; Si substrates; metal–semiconductor–metal (MSM); noise; photodetectors (PDs);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.893224
