Title :
Compact subthreshold slope modelling of short-channel double-gate MOSFETs
Author :
Monga, U. ; Fjeldly, T.A.
Author_Institution :
Dept. of Electron. & Telecommun., & UNIK - University Graduate Centre, Norwegian Univ. of Sci. & Technol., Kjeller
Abstract :
A precise, compact, subthreshold slope model of short-channel nanoscale double-gate MOSFETs is presented. The model encompasses the effects of device dimensions, built-in voltages and bias voltages on the subthreshold slope. The subthreshold model is based on conformal mapping techniques. Results are in excellent agreement with numerical simulations.
Keywords :
MOSFET; conformal mapping; nanotechnology; bias voltages; built-in voltages; compact subthreshold slope modelling; conformal mapping techniques; short-channel nanoscale double-gate MOSFETs; subthreshold slope;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2009.2810
