New Operating Mode Based on Electron/Hole Profile Matching in Nitride-Based Nonvolatile Memories

Author

Furnémont, A. ; Rosmeulen, M. ; van der Zanden, K. ; Van Houdt, J. ; De Meyer, K. ; Maes, H.

Author_Institution

IMEC, Leuven

Volume

28

Issue

4

fYear

2007

fDate

4/1/2007 12:00:00 AM

Firstpage

276

Lastpage

278

Abstract

A new operating mode for the nitride-based nonvolatile memory cells using channel hot electron injection for programming and hot hole injection for erasing is presented. The mismatch between the injected electron and hole profiles during programming and erasing operations, which limits the performance of the device, can be prevented. The profiles, extracted from charge-pumping measurements, are tuned by changing the operating voltages in order to have matched distributions. Substantial improvements in endurance and subsequent high-temperature data retention are demonstrated

Keywords

charge injection; hot carriers; random-access storage; channel hot electron injection; charge-pumping measurements; electron-hole profile matching; endurance improvements; erasing operations; high-temperature data retention; hot hole injection; nitride-based nonvolatile memories; operating voltages; programming operation; Channel hot electron injection; Charge carrier processes; Charge pumps; Current measurement; Data mining; Helium; Hot carriers; Lithography; Nonvolatile memory; Voltage; Endurance; matching; nitride; nonvolatile memories (NVM); retention;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2007.891756

Filename

4137634