Title :
New Operating Mode Based on Electron/Hole Profile Matching in Nitride-Based Nonvolatile Memories
Author :
Furnémont, A. ; Rosmeulen, M. ; van der Zanden, K. ; Van Houdt, J. ; De Meyer, K. ; Maes, H.
Author_Institution :
IMEC, Leuven
fDate :
4/1/2007 12:00:00 AM
Abstract :
A new operating mode for the nitride-based nonvolatile memory cells using channel hot electron injection for programming and hot hole injection for erasing is presented. The mismatch between the injected electron and hole profiles during programming and erasing operations, which limits the performance of the device, can be prevented. The profiles, extracted from charge-pumping measurements, are tuned by changing the operating voltages in order to have matched distributions. Substantial improvements in endurance and subsequent high-temperature data retention are demonstrated
Keywords :
charge injection; hot carriers; random-access storage; channel hot electron injection; charge-pumping measurements; electron-hole profile matching; endurance improvements; erasing operations; high-temperature data retention; hot hole injection; nitride-based nonvolatile memories; operating voltages; programming operation; Channel hot electron injection; Charge carrier processes; Charge pumps; Current measurement; Data mining; Helium; Hot carriers; Lithography; Nonvolatile memory; Voltage; Endurance; matching; nitride; nonvolatile memories (NVM); retention;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.891756
