Title :
Low-Frequency Noise Assessment of Silicon Passivated Ge pMOSFETs With TiN/TaN/ HfO2 Gate Stack
Author :
Guo, W. ; Nicholas, G. ; Kaczer, B. ; Todi, R.M. ; Jaeger, B. De ; Claeys, C. ; Mercha, A. ; Simoen, E. ; Cretu, B. ; Routoure, J.M. ; Carin, R.
Author_Institution :
IMEC, Leuven
fDate :
4/1/2007 12:00:00 AM
Abstract :
The low-frequency noise of pMOSFETs fabricated in epitaxial germanium-on-silicon substrates is studied. The gate stack consists of a TiN/TaN metal gate on top of a 1.3-nm equivalent oxide thickness HfO2/SiO2 gate dielectric bilayer. The latter is grown by chemical oxidation of a thin epitaxial silicon film deposited to passivate the germanium surface. It is shown that the spectrum is of the 1/fgamma type, which obeys number fluctuations for intermediate gate voltage overdrives. A correlation between the low-field mobility and the oxide trap density derived from the 1/f noise magnitude and the interface trap density obtained from charge pumping is reported and explained by considering remote Coulomb scattering
Keywords :
1/f noise; MOSFET; dielectric materials; germanium; hafnium compounds; interface states; oxidation; passivation; semiconductor device noise; silicon; silicon compounds; substrates; tantalum compounds; titanium compounds; 1.3 nm; 1/f noise; MOSFET; TiN-TaN-HfO2-SiO2-Ge-Si; charge pumping; chemical oxidation; gate dielectric bilayer; gate stack; interface trap density; low-field mobility; low-frequency noise assessment; oxide trap density; remote Coulomb scattering; surface passivation; Chemicals; Dielectric substrates; Dielectric thin films; Hafnium oxide; Low-frequency noise; MOSFETs; Oxidation; Semiconductor films; Silicon; Tin; Germanium (Ge); interface traps; low-frequency (LF) noise; oxide traps; pMOSFETs;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.891797
