Title :
A Quantum–Mechanical View on the Capacitance of a Silicon p-n Junction
Author :
Hurkx, G.A.M. ; Agarwal, P.
Author_Institution :
NXP Semicond., Leuven
fDate :
4/1/2007 12:00:00 AM
Abstract :
We have calculated the capacitance of a silicon p-n junction from a self-consistent solution to the effective-mass Schroumldinger and Poisson equations. Although the p-n product and the charge distribution deviate strongly from the semiclassical calculations, the quantum mechanically calculated capacitance of the silicon p-n junction differs only weakly from the semiclassical result. We show that the deviation from the semiclassical result can be approximated as band-gap narrowing in the quasi-neutral regions due to the exchange-energy term in the effective-mass Schroumldinger equation
Keywords :
Poisson equation; Schrodinger equation; capacitance; effective mass; elemental semiconductors; p-n junctions; quantum Hall effect; silicon; Poisson equations; Si; band-gap narrowing; charge distribution; effective-mass Schrodinger equation; exchange-energy term; p-n junction; quantum effect; quantum-mechanical capacitance; quasi-neutral regions; self-consistent solution; semiconductor devices; Charge carrier processes; P-n junctions; Photonic band gap; Poisson equations; Quantum capacitance; Quantum mechanics; Schrodinger equation; Semiconductor device doping; Silicon; Tunneling; Capacitance; diode; modeling; quantum effect semiconductor devices; tunneling;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.893225