Title :
Correction to "Revision of Tunneling Field-Effect Transistor in Standard CMOS Technologies"
Author :
Nirschl, Th ; Weis, M. ; Fulde, M. ; Schmitt-Landsiedel, Doris
fDate :
4/1/2007 12:00:00 AM
Abstract :
Previously published results by the authors, from 2004 to 2006, on the tunneling field-effect transistor (TFET) are revised in this correction. The devices that they had characterized as TFETs contain a conducting path in parallel to the intended tunneling junction. Therefore, the measured characteristics are similar to a MOSFET with a resistive source connection
Keywords :
CMOS integrated circuits; MOSFET; tunnelling; MOSFET; TFET; n-channel device; resistive source connection; standard CMOS technologies; tunneling barrier; tunneling field-effect transistor; tunneling junction; CMOS process; CMOS technology; Electrons; FETs; Implants; MOSFET circuits; Standards publication; Testing; Textile industry; Tunneling;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.893272
