Title :
A monolithically integrated 190-GHz SiGe push-push oscillator
Author :
Wanner, Robert ; Lachner, Rudolf ; Olbrich, Gerhard R.
Author_Institution :
Tech. Univ. Munchen, Germany
Abstract :
In this letter, we present a fully monolithically integrated G-band push-push oscillator. The device is fabricated in a production-near SiGe:C bipolar technology. The transistors used in this work show a maximum transit frequency fT= 200GHz and a maximum frequency of oscillation fmax= 275GHz. The passive circuitry is realized by integrated transmission-line components, metal-insulator-metal (MIM)-capacitors and TaN resistors. The frequency of the output signal can be tuned between 183.3GHz and 190.5GHz, the maximum output power of the oscillator is -4.5dBm and the measured minimum single sideband phase noise is -73dBc/Hz at 1-MHz offset frequency. This represents the highest output frequency for oscillators using heterojunction bipolar transistor technology and published up to now.
Keywords :
Ge-Si alloys; bipolar MIMIC; carbon; millimetre wave oscillators; 190 GHz; 200 GHz; 275 GHz; G-band push-push oscillator; MIMIC oscillators; SiGe:C; bipolar technology; heterojunction bipolar transistor technology; integrated transmission-line components; metal-insulator-metal capacitors; millimeter wave integrated circuits; monolithic integrated push-push oscillator; monolithic microwave integrated circuit oscillators; passive circuitry; resistors; Frequency; Germanium silicon alloys; Integrated circuit technology; Metal-insulator structures; Oscillators; Power generation; Power measurement; Resistors; Silicon germanium; Transmission lines; Heterojunction bipolar transistor (HBT); SiGe heterojunction bipolar transistor (HBT); millimeter wave integrated circuits; monolithic microwave integrated circuit (MMIC) oscillators;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2005.859996
