Beyond G-band: a 235 GHz InP MMIC amplifier

Author

Dawson, D. ; Samoska, L. ; Fung, A.K. ; Lee, K. ; Lai, R. ; Grundbacher, R. ; Po-Hsin Liu ; Raja, R.

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

Volume

15

Issue

12

fYear

2005

Firstpage

874

Lastpage

876

Abstract

We present results on an InP monolithic millimeter-wave integrated circuit (MMIC) amplifier having 10-dB gain at 235GHz. We designed this circuit and fabricated the chip in Northrop Grumman Space Technology´s (NGST) 0.07-μm InP high electron mobility transistor (HEMT) process. Using a WR3 (220-325GHz) waveguide vector network analyzer system interfaced to waveguide wafer probes, we measured this chip on-wafer for S-parameters. To our knowledge, this is the first time a WR3 waveguide on-wafer measurement system has been used to measure gain in a MMIC amplifier above 230GHz.

Keywords

HEMT integrated circuits; III-V semiconductors; field effect MIMIC; indium compounds; integrated circuit testing; millimetre wave amplifiers; 0.07 micron; 10 dB; 220 to 325 GHz; HEMT integrated circuits; InP; MIMIC amplifiers; WR3 waveguide vector network analyzer; high electron mobility transistor process; monolithic millimeter-wave integrated circuit amplifiers; Gain measurement; HEMTs; Indium phosphide; MMICs; MODFETs; Millimeter wave integrated circuits; Probes; Semiconductor device measurement; Space technology; Time measurement; G-Band; WR3 waveguide; high electron mobility transistors (HEMTs); indium phosphide; millimeter wave field-effect transistor (FET) amplifiers; monolithic millimeter-wave integrated circuits (MMICs);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2005.859984

Filename

1549896