Inverse modeling and its application in the design of high electron mobility transistors

Author

Ahn, Hyungkeun ; El Nokali, Mahmoud A.

Author_Institution

Dept. of Electr. Eng., Pittsburgh Univ., PA, USA

Volume

42

Issue

4

fYear

1995

fDate

4/1/1995 12:00:00 AM

Firstpage

598

Lastpage

604

Abstract

An inverse modeling technique is introduced to determine the structural and physical parameters of HEMT from the desired data for maximum transconductance. The technique is based on the availability of analytical expressions describing the electron carrier concentration, the current, the transconductance, the capacitances and the unity current gain frequency of a HEMT. Empirical formulae are obtained that relate the maximum transconductance to the doped AlGaAs thickness, spacer layer thickness, dopant density and aluminum mole fraction. The technique is applied to the design of a HEMT and shows good agreement with the experimental data

Keywords

III-V semiconductors; aluminium compounds; carrier density; design engineering; gallium arsenide; high electron mobility transistors; microwave field effect transistors; semiconductor device models; semiconductor doping; Al mole fraction; AlGaAs-GaAs; HEMT design; capacitance; dopant density; doped AlGaAs thickness; electron carrier concentration; high electron mobility transistors; inverse modeling technique; maximum transconductance; microwave device; spacer layer thickness; unity current gain frequency; Aluminum; Capacitance; Circuits; Electrical resistance measurement; Frequency; HEMTs; Inverse problems; MODFETs; Structural engineering; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.372060

Filename

372060