Modeling of current-voltage characteristics for strained and lattice matched HEMT´s on InP substrate using a variational charge control model

Author

Guan, Lee ; Christou, Aris ; Halkias, George ; Barbe, David F.

Author_Institution

CALCE Center for Electron. Packaging, Maryland Univ., College Park, MD, USA

Volume

42

Issue

4

fYear

1995

fDate

4/1/1995 12:00:00 AM

Firstpage

612

Lastpage

617

Abstract

A model for the calculation of the current-voltage characteristics of strained In_0.52Al_0.48As/In_xGa_1-xAs on InP substrate High Electron Mobility Transistors (HEMT´s), based on a variational charge control model, is presented. A polynomial fit of the two-dimensional electron gas (2DEG) density is used for the calculation of the current-voltage characteristics. The effect of strain is introduced into the 2DEG density versus gate voltage relation. Very good agreement between the calculated and measured I-V characteristics was obtained. In addition, our results show that, for an indium mole fraction of the In_xGa_1-xAs channel in the range 0.53-0.60, increasing the indium mole fraction lowers the threshold voltage and hence increases the drain current at the same gate bias

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; internal stresses; semiconductor device models; two-dimensional electron gas; variational techniques; In mole fraction; In_0.52Al_0.48As-InGaAs; InP; InP substrate; current-voltage characteristics; drain current; lattice matched HEMT; polynomial fit; strained HEMT; threshold voltage; two-dimensional electron gas density; variational charge control model; Capacitance; Current-voltage characteristics; HEMTs; Indium phosphide; Lattices; Linear approximation; MODFETs; Strain control; Substrates; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.372062

Filename

372062