Application of the TLM method to transient thermal simulation of microwave power transistors

Author

Webb, Paul W. ; Russell, Ian A D

Author_Institution

Sch. of Electron. & Electr. Eng., Birmingham Univ., UK

Volume

42

Issue

4

fYear

1995

fDate

4/1/1995 12:00:00 AM

Firstpage

624

Lastpage

631

Abstract

The transmission line matrix (TLM) explicit method of numerical simulation has been used to model the transient thermal properties of various microwave heterojunction bipolar transistor (HBT´s) power structures, used in a pulsed mode. Control of the time step during the simulation is of paramount importance and the paper outlines some of the problems encountered using time step control methods currently published and describes an improved algorithm. This improved time step control method has been implemented in a general purpose 3D TLM transient thermal simulator. Some simulation results are described for a variety HBT transistor structures with very different thermal time constants

Keywords

equivalent circuits; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor device models; simulation; thermal analysis; transient analysis; transmission line matrix methods; 3D TLM transient thermal simulator; HBT transistor structures; TLM method; heterojunction bipolar transistor; microwave power transistors; model; numerical simulation; pulsed mode operation; time step control methods; transient thermal properties; transient thermal simulation; transmission line matrix; Circuits; Geometry; Heterojunction bipolar transistors; Microwave theory and techniques; Power system transients; Power transistors; Power transmission lines; Thermal conductivity; Thermal resistance; Transmission line matrix methods;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.372064

Filename

372064