Title :
Photo response analysis in CCD image sensors with a VOD structure
Author :
Kawai, Shin´ichi ; Morimoto, Michihiro ; Mutoh, Nobuhiko ; Teranishi, Nobukazu
Author_Institution :
Sensor Res. Lab., NEC Corp., Kanagawa, Japan
fDate :
4/1/1995 12:00:00 AM
Abstract :
Photo response in CCD image sensors with Vertical-Overflow-Drain (VOD) was analyzed in an attempt to discover a way to lessen the photo response rise that accompanies increasing incident light intensity in the saturation region. A photo response analysis based on transistor I-V characteristics revealed that the extent of rise in the saturation region is uniquely determined by the non-ideality factor and temperature. Calculation of the non-ideality factor and its dependence on P-well impurity concentration and layer thickness further revealed that fabrication of P-wells with lower impurity concentrations and thicker layers would be effective in suppressing photo response rise
Keywords :
CCD image sensors; impurities; photodiodes; CCD image sensors; P-well impurity concentration; VOD structure; fabrication; incident light intensity; layer thickness; nonideality factor; photo response analysis; photoresponse rise suppression; saturation region; transistor I-V characteristics; vertical-overflow-drain structure; Charge coupled devices; Charge transfer; Charge-coupled image sensors; Electrons; Image analysis; Image sensors; Impurities; Knee; Laboratories; Photodiodes;
Journal_Title :
Electron Devices, IEEE Transactions on
