Photo response analysis in CCD image sensors with a VOD structure

Author

Kawai, Shin´ichi ; Morimoto, Michihiro ; Mutoh, Nobuhiko ; Teranishi, Nobukazu

Author_Institution

Sensor Res. Lab., NEC Corp., Kanagawa, Japan

Volume

42

Issue

4

fYear

1995

fDate

4/1/1995 12:00:00 AM

Firstpage

652

Lastpage

655

Abstract

Photo response in CCD image sensors with Vertical-Overflow-Drain (VOD) was analyzed in an attempt to discover a way to lessen the photo response rise that accompanies increasing incident light intensity in the saturation region. A photo response analysis based on transistor I-V characteristics revealed that the extent of rise in the saturation region is uniquely determined by the non-ideality factor and temperature. Calculation of the non-ideality factor and its dependence on P-well impurity concentration and layer thickness further revealed that fabrication of P-wells with lower impurity concentrations and thicker layers would be effective in suppressing photo response rise

Keywords

CCD image sensors; impurities; photodiodes; CCD image sensors; P-well impurity concentration; VOD structure; fabrication; incident light intensity; layer thickness; nonideality factor; photo response analysis; photoresponse rise suppression; saturation region; transistor I-V characteristics; vertical-overflow-drain structure; Charge coupled devices; Charge transfer; Charge-coupled image sensors; Electrons; Image analysis; Image sensors; Impurities; Knee; Laboratories; Photodiodes;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.372069

Filename

372069