An improvement of hot-carrier reliability in the stacked nitride-oxide gate n- and p-MISFET´s

Author

Momose, Hisayo Sasaki ; Morimoto, Toyota ; Ozawa, Yoshio ; Yamabe, Kikuo ; Iwai, Hiroshi

Author_Institution

ULSI Res. Center, Toshiba Corp., Kawasaki, Japan

Volume

42

Issue

4

fYear

1995

fDate

4/1/1995 12:00:00 AM

Firstpage

704

Lastpage

712

Abstract

Thin LPCVD stacked nitride-oxide gate MISFET´s offer the potential for high current drive as a consequence of the high permittivity of the nitride. However, thin nitride-oxide films have yet to be used in actual MISFET´s for LSI products because thin nitride films have poor masking ability during re-oxidation and low reliability under hot-carrier stress. We have investigated improvements to thin LPCVD stacked nitride-oxide films as regards masking ability during re-oxidation and hot-carrier reliability. The method proposed to improve film quality is densification through high-temperature rapid thermal processes and its effectiveness has been tested. Simple rapid thermal annealing (RTA) did not improve the film quality at all. On the other hand, rapid thermal nitridation (RTN) on the deposited nitride film improved it considerably. The reason for the improvement by RTN was investigated

Keywords

MISFET; chemical vapour deposition; hot carriers; nitridation; rapid thermal processing; semiconductor device reliability; LPCVD; LSI products; MISFETs; current drive; film quality; high-temperature rapid thermal processes; hot-carrier reliability; masking ability; permittivity; rapid thermal annealing; rapid thermal nitridation; reoxidation; stacked nitride-oxide gate; Dielectrics and electrical insulation; Electron traps; Hot carriers; Interface states; Large scale integration; MISFETs; Permittivity; Rapid thermal processing; Stress; Tunneling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.372075

Filename

372075