Performance and potential of ultrathin accumulation-mode SIMOX MOSFET´s

Author

Faynot, O. ; Cristoloveanu, S. ; Auberton-Hervé, A.J. ; Raynaud, C.

Author_Institution

Lab d´´Electron. et de Technol. de l´´Inf., CEA, Centre d´´Etudes Nucleaires de Grenoble, France

Volume

42

Issue

4

fYear

1995

fDate

4/1/1995 12:00:00 AM

Firstpage

713

Lastpage

719

Abstract

A systematic experimental investigation of the influence of the silicon film thickness on the properties of accumulation-mode SOI MOSFET´s has been performed, and the relevant original results are presented. Interface coupling mechanisms and their effects on the major device parameters (threshold voltages, subthreshold swing, and transconductance) are analyzed. The feasibility of ultrathin accumulation-mode SIMOX MOSFET´s for future submicrometer applications is demonstrated and discussed. Floating-body effects, which stand as critical aspects for SOI devices, are also investigated and the benefit of the silicon film thinning on the breakdown behavior of accumulation-mode devices is clearly established

Keywords

MOSFET; SIMOX; accumulation layers; SIMOX MOSFETs; breakdown behavior; film thinning; floating-body effects; interface coupling mechanisms; subthreshold swing; threshold voltages; transconductance; ultrathin accumulation-mode; Doping; Electric breakdown; MOSFET circuits; Neodymium; Semiconductor films; Silicon; Space technology; Substrates; Threshold voltage; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.372076

Filename

372076