DocumentCode :
752148
Title :
A high power light triggered triac with a novel light sensitive structure
Author :
Zhao, Shan-Qi ; Wang, Zheng-Yuan ; Gao, Ding-San
Author_Institution :
Dept. of Electron. Eng., Jilin Univ., Changchun, China
Volume :
42
Issue :
4
fYear :
1995
fDate :
4/1/1995 12:00:00 AM
Firstpage :
773
Lastpage :
779
Abstract :
A high power light triggered triac with novel gate structure is presented, which consists of two thyristors connected in inverse parallel and one light emitting diode provided over a cone-shaped groove light sensitive gate between the thyristors. The light trigger characteristics have been studied, and some manufacturing techniques are also described. A 500-A, 1200-V, 40-mm diameter light triggered triac has been developed. This device has the characteristics of the minimum light triggering power of less than 15 mw, the on-state voltage of less than 1.6 V, the commutating dV/dt capability of 100 V/μs, and the commutating di/dt capability of 50 A/μs
Keywords :
light emitting diodes; photoconducting switches; photothyristors; power semiconductor switches; 1.6 V; 1200 V; 15 mW; 40 mm; 500 A; commutating dV/dt capability; commutating di/dt capability; cone-shaped groove light sensitive gate; inverse parallel; light emitting diode; light sensitive structure; light trigger characteristics; light triggered triac; manufacturing techniques; minimum light triggering power; on-state voltage; thyristors; Circuits; Fabrication; Gallium arsenide; Light emitting diodes; Manufacturing; Semiconductor devices; Stimulated emission; Strips; Thyristors; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.372083
Filename :
372083
Link To Document :
بازگشت