DocumentCode :
752201
Title :
A 1-V 3.8 - 5.7-GHz wide-band VCO with differentially tuned accumulation MOS varactors for common-mode noise rejection in CMOS SOI technology
Author :
Fong, Neric H W ; Plouchart, Jean-Olivier ; Zamdmer, Noah ; Liu, Duixian ; Wagner, Lawrence F. ; Plett, Calvin ; Tarr, N. Garry
Author_Institution :
Cognio Canada Inc., Ottawa, Ont., Canada
Volume :
51
Issue :
8
fYear :
2003
Firstpage :
1952
Lastpage :
1959
Abstract :
In this paper, a 1-V 3.8 - 5.7-GHz wide-band voltage-controlled oscillator (VCO) in a 0.13-μm silicon-on-insulator (SOI) CMOS process is presented. This VCO features differentially tuned accumulation MOS varactors that: 1) provide 40% frequency tuning when biased between 0 - 1 V and 2) diminish the adverse effect of high varactor sensitivity through rejection of common-mode noise. This paper shows that, for differential LC VCOs, all low-frequency noise such as flicker noise can be considered to be common-mode noise, and differentially tuned varactors can be used to suppress common-mode noise from being upconverted to the carrier frequency. The noise rejection mechanism is explained, and the technological advantages of SOI over bulk CMOS in this regard is discussed. At 1-MHz offset, the measured phase noise is -121.67 dBc/Hz at 3.8 GHz, and -111.67 dBc/Hz at 5.7 GHz. The power dissipation is between 2.3 - 2.7-mW, depending on the center frequency, and the buffered output power is -9 dBm. Due to the noise rejection, the VCO is able to operate at very low voltage and low power. At a supply voltage of 0.75 V, the VCO only dissipates 0.8 mW at 5.5 GHz.
Keywords :
CMOS analogue integrated circuits; MIS devices; circuit tuning; flicker noise; low-power electronics; phase noise; radiofrequency integrated circuits; radiofrequency oscillators; silicon-on-insulator; varactors; voltage-controlled oscillators; 0.13 micron; 1 V; 2.3 to 2.7 mW; 3.8 to 5.7 GHz; CMOS SOI technology; RF analog circuit; common-mode noise rejection; differential LC VCO; differentially tuned accumulation MOS varactor; flicker noise; frequency tuning; low-frequency noise; low-voltage low-power operation; output power; phase noise; power dissipation; wideband voltage controlled oscillator; 1f noise; CMOS process; CMOS technology; Frequency; Low-frequency noise; Silicon on insulator technology; Tuning; Varactors; Voltage-controlled oscillators; Wideband;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2003.815273
Filename :
1215675
Link To Document :
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