• DocumentCode
    752201
  • Title

    A 1-V 3.8 - 5.7-GHz wide-band VCO with differentially tuned accumulation MOS varactors for common-mode noise rejection in CMOS SOI technology

  • Author

    Fong, Neric H W ; Plouchart, Jean-Olivier ; Zamdmer, Noah ; Liu, Duixian ; Wagner, Lawrence F. ; Plett, Calvin ; Tarr, N. Garry

  • Author_Institution
    Cognio Canada Inc., Ottawa, Ont., Canada
  • Volume
    51
  • Issue
    8
  • fYear
    2003
  • Firstpage
    1952
  • Lastpage
    1959
  • Abstract
    In this paper, a 1-V 3.8 - 5.7-GHz wide-band voltage-controlled oscillator (VCO) in a 0.13-μm silicon-on-insulator (SOI) CMOS process is presented. This VCO features differentially tuned accumulation MOS varactors that: 1) provide 40% frequency tuning when biased between 0 - 1 V and 2) diminish the adverse effect of high varactor sensitivity through rejection of common-mode noise. This paper shows that, for differential LC VCOs, all low-frequency noise such as flicker noise can be considered to be common-mode noise, and differentially tuned varactors can be used to suppress common-mode noise from being upconverted to the carrier frequency. The noise rejection mechanism is explained, and the technological advantages of SOI over bulk CMOS in this regard is discussed. At 1-MHz offset, the measured phase noise is -121.67 dBc/Hz at 3.8 GHz, and -111.67 dBc/Hz at 5.7 GHz. The power dissipation is between 2.3 - 2.7-mW, depending on the center frequency, and the buffered output power is -9 dBm. Due to the noise rejection, the VCO is able to operate at very low voltage and low power. At a supply voltage of 0.75 V, the VCO only dissipates 0.8 mW at 5.5 GHz.
  • Keywords
    CMOS analogue integrated circuits; MIS devices; circuit tuning; flicker noise; low-power electronics; phase noise; radiofrequency integrated circuits; radiofrequency oscillators; silicon-on-insulator; varactors; voltage-controlled oscillators; 0.13 micron; 1 V; 2.3 to 2.7 mW; 3.8 to 5.7 GHz; CMOS SOI technology; RF analog circuit; common-mode noise rejection; differential LC VCO; differentially tuned accumulation MOS varactor; flicker noise; frequency tuning; low-frequency noise; low-voltage low-power operation; output power; phase noise; power dissipation; wideband voltage controlled oscillator; 1f noise; CMOS process; CMOS technology; Frequency; Low-frequency noise; Silicon on insulator technology; Tuning; Varactors; Voltage-controlled oscillators; Wideband;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.2003.815273
  • Filename
    1215675