DocumentCode :
752246
Title :
An implantable CMOS circuit interface for multiplexed microelectrode recording arrays
Author :
Ji, Jin ; Wise, Kensall D.
Author_Institution :
Center for Integrated Sensors & Circuits, Michigan Univ., Ann Arbor, MI, USA
Volume :
27
Issue :
3
fYear :
1992
fDate :
3/1/1992 12:00:00 AM
Firstpage :
433
Lastpage :
443
Abstract :
A second-generation multichannel probe designed for measuring single-unit activity in neural structures is described. The probe includes CMOS circuitry for electronically positioning the recording sites with respect to the active neurons and for amplifying and multiplexing the recorded signals. The probe selects eight active recording sites from among 32 on the probe shank using a static input channel selector. The neural signals on the selected channels are then amplified and multiplexed to the outside world. The probe offers a typical AC gain of 300 (15 Hz to 7 kHz), a DC gain of 0.3, and an equivalent input noise of 15 μV rms. Operating from a single 5-V supply, the probe dissipates 2.5 mW of power and implements channel selection, self-testing, data output, and initialization using three external leads. The probe is realized using 12 masks in a high-yield single-sided dissolved wafer process with a 3-μm feature size for the circuitry and a 3-μm pitch on the electrode shanks
Keywords :
CMOS integrated circuits; bioelectric potentials; biological techniques and instruments; microelectrodes; multiplexing equipment; neurophysiology; 15 Hz to 7 kHz; 2.5 mW; 3 micron; 5 V; amplifying; channel selection; data output; equivalent input noise; external leads; feature size; gain; implantable CMOS circuit interface; initialization; long term monitoring; multiplexed microelectrode recording arrays; multiplexing; neural activity monitoring; neural signals; recording site selection; second-generation multichannel probe; self-testing; single-sided dissolved wafer process; Built-in self-test; CMOS process; Circuits; Electrodes; Microelectrodes; Neurons; Probes; Signal processing; Silicon; Substrates;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.121568
Filename :
121568
Link To Document :
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