High efficiency surface-emitting laser with subwavelength antireflection structure

Author

Vaissié, Laurent ; Smolski, Oleg V. ; Mehta, Alok ; Johnson, Eric G.

Author_Institution

Coll. of Opt. & Photonics, Orlando, FL, USA

Volume

17

Issue

4

fYear

2005

fDate

4/1/2005 12:00:00 AM

Firstpage

732

Lastpage

734

Abstract

We report on a high efficiency tapered grating surface-emitting laser with an antireflection-structured (ARS) substrate. A 64% improvement of the device efficiency is obtained by monolithic integration of a sawtooth-shaped ARS on the GaAs substrate. Slope efficiencies of 0.82 W/A were measured at 975 nm in pulse pumping and are mainly limited by free-carrier absorption in the n-doped GaAs substrate. A maximum peak power of 25 W was obtained without coating the device´s cleaved facet. The symmetry of the near-field intensity profile along the grating coupler is improved by varying the grating duty cycle from 20% to 55%.

Keywords

diffraction gratings; integrated optoelectronics; monolithic integrated circuits; optical couplers; optical pumping; semiconductor lasers; surface emitting lasers; 25 W; 975 nm; GaAs; GaAs substrate; antireflection-structured substrate; cleaved facet; free-carrier absorption; grating coupler; high efficiency laser; monolithic integration; near-field intensity profile; pulse pumping; sawtooth-shaped ARS; subwavelength antireflection structure; surface-emitting laser; tapered grating laser; Coatings; Dielectric substrates; Gallium arsenide; Gratings; Optical coupling; Optical surface waves; Pulse measurements; Reflectivity; Reluctance generators; Surface emitting lasers; Grating coupler; subwavelength structure; surface-emitting semiconductor laser;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2004.843259

Filename

1411858