DocumentCode
752411
Title
Relaxation time approximation and mixing of hot and cold electron populations
Author
Bordelon, T.J. ; Agostinelli, V.M. ; Wang, Xiu-Lin ; Maziar, C.M. ; Tasch, A.F.
Author_Institution
Microelectron Res. Center, Texas Univ., Austin, TX, USA
Volume
28
Issue
12
fYear
1992
fDate
6/4/1992 12:00:00 AM
Firstpage
1173
Lastpage
1175
Abstract
Relaxation time models found in most hydrodynamic device simulators fail in the presence of abruptly decreasing electric fields. Such fields are encountered at MOSFET drain junctions and lead to carrier distribution functions composed of two distinct populations: one hot and one cold. An approach which expresses features of both populations and produces more accurate simulation results is presented.
Keywords
carrier relaxation time; hot carriers; insulated gate field effect transistors; semiconductor device models; MOSFET drain junctions; carrier distribution functions; cold electron populations; hot electron population; hydrodynamic device simulators; relaxation time models; simulation results;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920740
Filename
141186
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