Title :
A single barrier varactor quintupler at 170 GHz
Author :
Räisänen, Antti V. ; Tolmunen, Timo J. ; Natzic, Mark ; Frerking, Margaret A. ; Brown, Elliott ; Grönqvist, Hans ; Nilsen, Svein M.
Author_Institution :
Radio Lab., Helsinki Univ. of Technol., Espoo, Finland
fDate :
3/1/1995 12:00:00 AM
Abstract :
InGaAs-InAlAs single-barrier varactor (SBV) diodes are tested as frequency quintuplers. The diodes were tested in a crossed-waveguide structure and provided output frequencies between 148 and 187 GHz. The highest observed flange-to-flange efficiency was 0.78% at an output frequency of 172 GHz. This is nearly four times greater than the best quintupler efficiency obtained for previous SBV varactors made from the GaAs-AlGaAs materials system
Keywords :
III-V semiconductors; aluminium compounds; frequency multipliers; gallium arsenide; indium compounds; millimetre wave diodes; millimetre wave frequency convertors; varactors; waveguide components; 0.78 percent; 148 to 187 GHz; 170 GHz; EHF; InGaAs-InAlAs; MM-wave multiplier; crossed-waveguide structure; frequency quintuplers; single barrier varactor quintupler; single-barrier varactor diodes; Electrons; Frequency; Laboratories; Microstrip antennas; Microwave theory and techniques; Oscillators; Schottky diodes; Semiconductor diodes; Testing; Varactors;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
