Title :
A radiation-hardened 16/32-bit microprocessor
Author :
Hass, K.J. ; Treece, R.K. ; Giddings, A.E.
Author_Institution :
Sandia Nat. Lab., Albuquerque, NM, USA
fDate :
12/1/1989 12:00:00 AM
Abstract :
A single-chip radiation-hardened 16/32-bit microprocessor (the SA3300) has been designed, fabricated, and tested. The SA3300 is designed to withstand high levels of ionizing radiation and is resistant to single-event upset (SEU) caused by heavy ions. New techniques were used to improve immunity to SEU effects in combinational logic. Testing has demonstrated that the SA3300 is functional after a total gamma dose of 5 Mrad(Si). The device does not suffer latchup from SEU, and parts without SEU resistors have an SEU linear energy transfer (LET) upset threshold greater than 28 MeV/mg/cm2
Keywords :
MOS integrated circuits; VLSI; gamma-ray effects; integrated circuit technology; ion beam effects; microprocessor chips; radiation hardening (electronics); 16 bit; 32 bit; 5E6 rad; SA3300; SEU linear energy transfer; combinational logic; gamma dose; high levels of ionizing radiation; immunity to SEU; resistant to single-event upset; upset threshold; Circuit simulation; Immunity testing; Laboratories; Logic design; Logic devices; Microprocessors; Resistors; Single event upset; Temperature distribution; Timing;
Journal_Title :
Nuclear Science, IEEE Transactions on
