Title :
A model for proton-induced SEU
Author :
Bion, T. ; Bourrieau, J.
Author_Institution :
Centre d´´Etudes et de Recherches de Toulouse, France
fDate :
12/1/1989 12:00:00 AM
Abstract :
The authors present a method for predicting proton-induced single-event upset (SEU) rates in devices exposed to given proton fluxes, within a particular spacecraft shielding. The approach uses experimental heavy-ion cross-section data, combined with nuclear reaction calculations, in order to determine the proton-induced SEU cross section versus proton energy relationship. Calculations for two devices, the Fairchild 93L422 RAM and the Intel 2164A dynamic RAM, for which heavy-ion test data were available, are presented and compared with other theoretical results and with ground-based experimental data. Available on-orbit SEU data are then compared with the present predictions. Predicted SEU rates for both protons and cosmic rays at various 60° circular orbits are also compared. Good agreement is found in all cases
Keywords :
integrated memory circuits; proton effects; radiation hardening (electronics); random-access storage; 60° circular orbits; Fairchild 93L422 RAM; Intel 2164A dynamic RAM; cosmic rays; experimental heavy-ion cross-section data; heavy-ion test data; model; nuclear reaction calculations; on-orbit SEU data; proton energy; proton-induced SEU; spacecraft shielding; Aluminum; Circuits; Cosmic rays; Ionization; Low earth orbit satellites; Protons; Random access memory; Read-write memory; Single event upset; Space vehicles;
Journal_Title :
Nuclear Science, IEEE Transactions on