Ion induced charge collection in GaAs MESFETs

Author

Campbell, A. ; Knudson, A. ; McMorrow, D. ; Anderson, W. ; Roussos, J. ; Espy, E. ; Buchner, S. ; Kang, K. ; Kerns, D. ; Kens, S.

Author_Institution

US Naval Res. Lab., Washington, DC, USA

Volume

36

Issue

6

fYear

1989

Firstpage

2292

Lastpage

2299

Abstract

Charge-collection measurements on GaAs MESFET test structures demonstrate that more charge can be collected at the gate than is deposited in the active layer and more charge can be collected at the drain than the total amount of charge produced by the ion. Enhanced charge collection at the gate edge has also been observed. The current transients produced by the energetic ions have been measured directly with about 20-ps resolution. The significance of this work is that it shows charge-collection phenomena in GaAs MESFETs to be very complex with important implications for modeling SEU (single-event upset) phenomena and developing techniques to mitigate SEU effects.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; ion beam effects; radiation hardening (electronics); semiconductor technology; GaAs; MESFET test structures; MESFETs; SEU modelling; charge collection enhancement; charge-collection phenomena; current transients; energetic ions; ion induced charge collection; single-event upset; techniques to mitigate SEU effects; Charge measurement; Circuit testing; Current measurement; Energy loss; Gallium arsenide; Integrated circuit measurements; MESFETs; Microwave FETs; Pulse measurements; Single event upset;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.45438

Filename

45438