Title :
An HEMT input charge preamplifier for nanoseconds signal processing time
Author :
Bertuccio, Giuseppe ; Pullia, Alberto
Author_Institution :
Dipartimento di Elettronica e Inf., Politecnico di Milano, Italy
fDate :
4/1/1995 12:00:00 AM
Abstract :
The capabilities of the high electron mobility transistor (HEMT) as front end device in charge preamplifiers for radiation detectors have been experimentally tested. We present the design and performance of a fast low-noise charge preamplifier having an HEMT as input transistor. An equivalent noise charge of 139 rms electrons, i.e., 1.13 keV FWHM in silicon detectors, has been measured at room temperature with 10 ns RC-CR shaping and 1 pF input capacitance
Keywords :
high electron mobility transistors; nuclear electronics; preamplifiers; signal processing; silicon radiation detectors; 1 pF; 1.13 keV; 10 ns; 10 ns RC-CR shaping; FWHM; HEMT input charge preamplifier; Si detectors; equivalent noise charge; fast low-noise charge preamplifier; front end device; high electron mobility transistor; input capacitance; input transistor; nanoseconds signal processing time; radiation detectors; rms electrons; room temperature; Electrons; HEMTs; MODFETs; Noise shaping; Preamplifiers; Radiation detectors; Signal processing; Silicon; Temperature measurement; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
