An HEMT input charge preamplifier for nanoseconds signal processing time

Author

Bertuccio, Giuseppe ; Pullia, Alberto

Author_Institution

Dipartimento di Elettronica e Inf., Politecnico di Milano, Italy

Volume

42

Issue

2

fYear

1995

fDate

4/1/1995 12:00:00 AM

Firstpage

66

Lastpage

72

Abstract

The capabilities of the high electron mobility transistor (HEMT) as front end device in charge preamplifiers for radiation detectors have been experimentally tested. We present the design and performance of a fast low-noise charge preamplifier having an HEMT as input transistor. An equivalent noise charge of 139 rms electrons, i.e., 1.13 keV FWHM in silicon detectors, has been measured at room temperature with 10 ns RC-CR shaping and 1 pF input capacitance

Keywords

high electron mobility transistors; nuclear electronics; preamplifiers; signal processing; silicon radiation detectors; 1 pF; 1.13 keV; 10 ns; 10 ns RC-CR shaping; FWHM; HEMT input charge preamplifier; Si detectors; equivalent noise charge; fast low-noise charge preamplifier; front end device; high electron mobility transistor; input capacitance; input transistor; nanoseconds signal processing time; radiation detectors; rms electrons; room temperature; Electrons; HEMTs; MODFETs; Noise shaping; Preamplifiers; Radiation detectors; Signal processing; Silicon; Temperature measurement; Testing;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.372134

Filename

372134