Title :
Theoretical considerations for SRAM total-dose hardening
Author :
Francis, P. ; Flandre, D. ; Colinge, J.P.
Author_Institution :
Univ. Catholique de Louvain, Belgium
fDate :
4/1/1995 12:00:00 AM
Abstract :
The theoretical hardness against total dose of the six-transistor SRAM cell is investigated in detail, an explicit analytical expression of the maximum tolerable threshold voltage shift is derived for two cross-coupled inverters. A numerical method is used to explore the hardness of the read and write operations. Both N- and P-channel access transistors designs are considered and their respective advantages are compared. The study points out that the radiation hardness mainly relies on the technology. Results obtained with the very robust Gate-All-Around process are finally presented
Keywords :
radiation effects; radiation hardening (electronics); stimulated Raman scattering; Gate-All-Around process; N-channel access transistor; P-channel access transistor; SRAM total-dose hardening; maximum tolerable threshold voltage shift; read and write operations; six-transistor SRAM cell; theoretical hardness; total dose; two cross-coupled inverters; Circuits; Inverters; Logic devices; Logic gates; Random access memory; Read-write memory; Robustness; Silicon; Stability analysis; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
