Theoretical considerations for SRAM total-dose hardening

Author

Francis, P. ; Flandre, D. ; Colinge, J.P.

Author_Institution

Univ. Catholique de Louvain, Belgium

Volume

42

Issue

2

fYear

1995

fDate

4/1/1995 12:00:00 AM

Firstpage

83

Lastpage

91

Abstract

The theoretical hardness against total dose of the six-transistor SRAM cell is investigated in detail, an explicit analytical expression of the maximum tolerable threshold voltage shift is derived for two cross-coupled inverters. A numerical method is used to explore the hardness of the read and write operations. Both N- and P-channel access transistors designs are considered and their respective advantages are compared. The study points out that the radiation hardness mainly relies on the technology. Results obtained with the very robust Gate-All-Around process are finally presented

Keywords

radiation effects; radiation hardening (electronics); stimulated Raman scattering; Gate-All-Around process; N-channel access transistor; P-channel access transistor; SRAM total-dose hardening; maximum tolerable threshold voltage shift; read and write operations; six-transistor SRAM cell; theoretical hardness; total dose; two cross-coupled inverters; Circuits; Inverters; Logic devices; Logic gates; Random access memory; Read-write memory; Robustness; Silicon; Stability analysis; Threshold voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.372136

Filename

372136