High-performance InGaAs-InP APDs on GaAs

Author

Franco, Darlene S. ; Vaccaro, Kenneth ; Clark, William R. ; Teynor, William A. ; Dauplaise, Helen M. ; Roland, Mark ; Krejca, Brian ; Lorenzo, Joseph P.

Author_Institution

Solid State Sci. Corp., Hollis, NH, USA

Volume

17

Issue

4

fYear

2005

fDate

4/1/2005 12:00:00 AM

Firstpage

873

Lastpage

874

Abstract

Epitaxial layer transfer was used to fabricate In_0.53Ga_0.47As-InP avalanche photodiodes on GaAs substrates. The photodiodes displayed a gain-bandwidth product of 80 GHz, dark current of 10.20 nA at 90% of the breakdown voltage, and responsivity of 5.9 A/W at 2 V below breakdown. Performance is comparable to standard devices fabricated on InP substrates, suggesting the transfer process does not degrade material quality.

Keywords

III-V semiconductors; avalanche photodiodes; dark conductivity; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor growth; 10.20 nA; 2 V; 80 GHz; GaAs; InGaAs-InP; InGaAs-InP APD; avalanche photodiodes; dark current; epitaxial layer transfer; gain-bandwidth product; responsivity; Avalanche photodiodes; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Laser radar; Optical imaging; Solid state circuits; Substrates; Wafer bonding; Wire; Avalanche photodiode (APD); InGaAs; hybridization;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2005.843933

Filename

1411905