DocumentCode :
752967
Title :
Investigation into the properties of the explicit method for the resolution of the semiconductor device equations
Author :
Pleumeekers, Jacco L. ; Simon, Claude M. ; Mottet, Serge
Author_Institution :
France Telecom, CNET, Lannion, France
Volume :
14
Issue :
4
fYear :
1995
fDate :
4/1/1995 12:00:00 AM
Firstpage :
459
Lastpage :
463
Abstract :
Most simulators use a Newton-like method for solving the semiconductor device equations. The linearized system obtained by this method is then solved either directly or iteratively. However, it is also possible to use an explicit method instead of the implicit Newton method. This method was first introduced by Kurata and Nakamura (see ibid., vol. 11, no. 8, p. 1013-22, 1992) for the semiconductor equations. The authors revise and improve this explicit method and show the properties and limitations of the algorithm. The main limitation of the method is the long computation time needed. However, the method benefits from a very simple algorithm, low memory requirements, and highly parallel properties
Keywords :
convergence of numerical methods; electronic engineering computing; iterative methods; parallel algorithms; semiconductor device models; simulation; algorithm; explicit method; highly parallel properties; low memory requirements; semiconductor device equations; simulators; Charge carrier processes; Current density; Differential equations; Newton method; Nonlinear equations; Poisson equations; Radiative recombination; Semiconductor devices; Steady-state; Telecommunications;
fLanguage :
English
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0070
Type :
jour
DOI :
10.1109/43.372372
Filename :
372372
Link To Document :
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