Title :
Optical bandwidth considerations in p-i-n multiple quantum-well modulators
Author :
Goossen, K.W. ; Cunningham, J.E. ; Jan, W.Y.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
fDate :
3/1/1995 12:00:00 AM
Abstract :
We investigate the optical bandwidth of p-i(multiple quantum well [MQW])-n modulators employing various MQW designs. The optical bandwidth translates directly into an operating temperature range due to the shift of the band gap with temperature. We find that although greater maximum modulation may be obtained with narrow (~90 Å) quantum wells operating below the band edge (absorption increases with field), uniform large performance may be obtained over a larger bandwidth using wider (~110 Å) quantum wells operating at the exciton (absorption decreases with field). We obtain a usable bandwidth of 7.7 nm, which translates into a operating temperature range of 27°C
Keywords :
III-V semiconductors; aluminium compounds; electro-optical modulation; energy gap; excitons; gallium arsenide; integrated optics; optical interconnections; semiconductor quantum wells; 110 A; 27 C; 90 A; GaAs-AlGaAs; GaAs-AlGaAs QW modulators; MQW designs; band edge; band gap shift; exciton; operating temperature range; optical bandwidth; optical bandwidth considerations; p-i-n multiple quantum-well modulators; Absorption; Bandwidth; Excitons; Gallium arsenide; High speed optical techniques; Optical modulation; Optical superlattices; PIN photodiodes; Quantum well devices; Temperature distribution;
Journal_Title :
Lightwave Technology, Journal of