Detrimental effect of impact ionization in the absorption region on the frequency response and excess noise performance of InGaAs-InAlAs SACM avalanche photodiodes

Author

Duan, Ning ; Wang, S. ; Zheng, X.G. ; Li, X. ; Ning Li ; Campbell, Joe C. ; Chad Wang ; Coldren, Larry A.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX, USA

Volume

41

Issue

4

fYear

2005

fDate

4/1/2005 12:00:00 AM

Firstpage

568

Lastpage

572

Abstract

It is shown that optimization of the electric field profile in the absorption region of separate absorption, charge, and multiplication InGaAs-InAlAs avalanche photodiodes is critical to achieve low excess noise and high gain bandwidth product.

Keywords

III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium arsenide; impact ionisation; indium compounds; semiconductor device noise; InGaAs-InAlAs; InGaAs-InAlAs SACM avalanche photodiode excess noise; electric field profile optimization; gain bandwidth product; impact ionization; separate-absorption-charge-multiplication; Absorption; Avalanche photodiodes; Bandwidth; Frequency response; Impact ionization; Indium compounds; Indium gallium arsenide; Indium phosphide; Optical noise; Silicon; Avalanche photodiodes (APDs); excess noise factor; impact ionization; photodetectors;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2005.843613

Filename

1411961