Title :
A method to determine the above-threshold stability of distributed feedback semiconductor laser diodes
Author :
Lo, S.K.B. ; Ghafouri-Shiraz, H.
Author_Institution :
Sch. of Electron. & Electr. Eng., Birmingham Univ., UK
fDate :
4/1/1995 12:00:00 AM
Abstract :
An analysis of the above-threshold stability of distributed feedback (DFB) semiconductor laser diodes (LD´s) is presented. It is based on a numerical model which takes into account effects of spatial hole burning (SHB) and the nonlinear gain coefficient. In the analysis, the Newton-Raphson (NR) technique has not been used, and no functional derivative is required. Taking into account the presence of another nonlasing mode, the single-mode stability of the DFB laser diodes is determined. The proposed model does not depend on any particular DFB structure, and hence can be applied to various DFB LD structures. Numerical results are presented for a three-phase-shift (3PS) DFB LD
Keywords :
Newton-Raphson method; distributed feedback lasers; laser feedback; laser stability; laser theory; nonlinear optics; optical hole burning; semiconductor device models; semiconductor lasers; DFB LD structures; DFB laser diodes; DFB semiconductor laser diodes; Newton-Raphson technique; above-threshold stability; distributed feedback semiconductor laser diodes; functional derivative; nonlasing mode; nonlinear gain coefficient; numerical model; single-mode stability; spatial hole burning; three-phase-shift DFB LD; Charge carrier density; Diode lasers; Distributed feedback devices; Laser feedback; Laser modes; Laser stability; Laser theory; Numerical models; Semiconductor lasers; Stability analysis;
Journal_Title :
Lightwave Technology, Journal of
