Title :
A 30–50 GHz Wide Modulation Bandwidth Bidirectional BPSK Demodulator/ Modulator With Low LO Power
Author :
Chang, Hong-Yeh ; Weng, Shou-Hsien ; Chiong, Chau-Ching
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Jhongli
fDate :
5/1/2009 12:00:00 AM
Abstract :
A 30-50 GHz wide modulation bandwidth bidirectional binary phase shift keying (BPSK) demodulator/modulator using a 2 mum standard GaAs HBT process is presented in this letter. A single balanced mixer with HBT PN-junction diodes is employed in the circuit design. With a local oscillator (LO) power of 0 dBm, this letter demonstrates a maximum conversion loss of 13 dB, a modulation bandwidth of wider than 3 GHz, and a LO-to-RF isolation of better than 45 dB. The BPSK demodulation or modulation can be performed at the same input/output ports of the circuit, and therefore it can be applied to millimeter-wave (MMW) gigabit bidirectional communication systems to further reduce the complexity of the transceivers.
Keywords :
demodulators; gallium arsenide; heterojunction bipolar transistors; millimetre wave mixers; millimetre wave oscillators; phase shift keying; GaAs; HBT PN-junction diodes; bandwidth 30 GHz to 50 GHz; bidirectional BPSK demodulator-modulator; binary phase shift keying; circuit design; loss 13 dB; millimeter-wave gigabit bidirectional communication systems; single balanced mixer; size 2 mum; transceivers; Bidirectional; binary phase shift keying (BPSK); demodulator; modulator;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2009.2017615