A 30–50 GHz Wide Modulation Bandwidth Bidirectional BPSK Demodulator/ Modulator With Low LO Power

Author

Chang, Hong-Yeh ; Weng, Shou-Hsien ; Chiong, Chau-Ching

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Jhongli

Volume

19

Issue

5

fYear

2009

fDate

5/1/2009 12:00:00 AM

Firstpage

332

Lastpage

334

Abstract

A 30-50 GHz wide modulation bandwidth bidirectional binary phase shift keying (BPSK) demodulator/modulator using a 2 mum standard GaAs HBT process is presented in this letter. A single balanced mixer with HBT PN-junction diodes is employed in the circuit design. With a local oscillator (LO) power of 0 dBm, this letter demonstrates a maximum conversion loss of 13 dB, a modulation bandwidth of wider than 3 GHz, and a LO-to-RF isolation of better than 45 dB. The BPSK demodulation or modulation can be performed at the same input/output ports of the circuit, and therefore it can be applied to millimeter-wave (MMW) gigabit bidirectional communication systems to further reduce the complexity of the transceivers.

Keywords

demodulators; gallium arsenide; heterojunction bipolar transistors; millimetre wave mixers; millimetre wave oscillators; phase shift keying; GaAs; HBT PN-junction diodes; bandwidth 30 GHz to 50 GHz; bidirectional BPSK demodulator-modulator; binary phase shift keying; circuit design; loss 13 dB; millimeter-wave gigabit bidirectional communication systems; single balanced mixer; size 2 mum; transceivers; Bidirectional; binary phase shift keying (BPSK); demodulator; modulator;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2009.2017615

Filename

4840506